Title:
MANUFACTURING METHOD OF SILICA BASED FILM, SILICA BASED FILM, INSULATED FILM AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3941327
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form a coating film having proper uniform thickness as the interlayer isolation of a semiconductor device and to obtain the film excellent in preservable stability and having excellent specific dielectric, mechanical strength and hygroscopic resistance.
SOLUTION: The manufacturing method of a silica based film is characterized by irradiating the film containing a siloxane compound with electron beam.
Inventors:
Atsushi Shioda
Koji Sumitani
Koji Sumitani
Application Number:
JP2000102715A
Publication Date:
July 04, 2007
Filing Date:
April 04, 2000
Export Citation:
Assignee:
JSR CORPORATION
International Classes:
B05D7/24; B05D3/06; C08G77/50; C08J7/00; C09D183/04; H01L21/312; H01L21/316; (IPC1-7): B05D7/24; B05D3/06; H01L21/312; H01L21/316; //C08G77/50; C08J7/00; C09D183/04; C08L83:04
Domestic Patent References:
| JP11506872A | ||||
| JP7209505A | ||||
| JP7008908A | ||||
| JP57059672A | ||||
| JP10303190A | ||||
| JP10237307A | ||||
| JP11505670A | ||||
| JP2001127152A | ||||
| JP10144672A |
Foreign References:
| WO2000018847A1 |