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Title:
炭化珪素半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5135879
Kind Code:
B2
Abstract:
A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched, whereby a two-layer etching mask is formed in which Ni film portions overhang Al film portions. Mesa grooves are formed by dry etching by using this etching mask.

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Inventors:
Yasuyuki Kawada
Application Number:
JP2007133597A
Publication Date:
February 06, 2013
Filing Date:
May 21, 2007
Export Citation:
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Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
JP9129622A
JP6390828A
JP4180622A
JP2003514393A
JP2002542623A
JP6280060A
Foreign References:
WO2005008760A1
Attorney, Agent or Firm:
Yoichi Matsumoto



 
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