Title:
MANUFACTURING METHOD OF SILICON EPITAXIAL WAFER
Document Type and Number:
Japanese Patent JP2004186650
Kind Code:
A
Abstract:
To provide a manufacturing method of silicon epitaxial wafer, which hardly forms minute unevenness on the surface of a silicon epitaxial layer and can prevent a haze.
A susceptor 20 which has a spot facing 21 which is composed of an upper part 21a for holding the fringe of a semiconductor substrate W and a bottom part 21b formed in the center of the spot facing 21 lower than the upper part 21a, and in which the bottom part 21b has holes 22 which is opened during vapor deposition, is used. The semiconductor substrate W is placed so that a CVD oxide film 1 formed on the substrate W faces the holes 22 to carry out vapor deposition of a silicon epitaxial layer on the substrate W.
More Like This:
| JP03225820 | IMPROVEMENT OF FILM QUALITY |
| JP06204621 | MANUFACTURE OF SEMICONDUCTOR FILM |
| JP08232070 | DEPOSITED FILM-FORMING DEVICE AND ELECTRODE USED THEREFOR |
Inventors:
Suga, Akihiko
Nakasugi, Sunao
Arai, Takeshi
Nakasugi, Sunao
Arai, Takeshi
Application Number:
JP2002000355239
Publication Date:
July 02, 2004
Filing Date:
December 06, 2002
Export Citation:
Assignee:
SHIN ETSU HANDOTAI CO LTD
International Classes:
H01L21/205; C23C16/458; C30B25/02; C30B25/12; C30B29/06; (IPC1-7): H01L21/205