Title:
単結晶シリコンの製造方法
Document Type and Number:
Japanese Patent JP7047752
Kind Code:
B2
Abstract:
To provide a production method of a single crystal silicon which suppresses shifting from a desired value of an oxygen density of the single crystal silicon.SOLUTION: The method includes; a first step for melting a silicon material by a heater 54; a second step for adjusting a height position of a liquid surface of a silicon melt M to a specified height position to the height position of the top edge of the heater 54; a third step for growing the single crystal silicon by dipping a seed crystal S in the silicon melt M and pulling it up under a production condition capable of obtaining a single crystal silicon with a desired oxygen density, and a plurality of sticks of single crystal silicon are produced by a CZ method for repeating production of the single crystal silicon by performing the first to third steps, and relation of a difference between the top edge height of the heater 54 and that of a carbon made crucible 52b, and a real value of the oxygen density of the single crystal silicon is acquired for the production condition beforehand, and then, the production condition is corrected based on the acquired relation.SELECTED DRAWING: Figure 1
Inventors:
Kazuyuki Egashira
Application Number:
JP2018244665A
Publication Date:
April 05, 2022
Filing Date:
December 27, 2018
Export Citation:
Assignee:
Sumco inc.
International Classes:
C30B29/06; C30B15/00
Domestic Patent References:
| JP6172081A | ||||
| JP9110578A | ||||
| JP2003040693A |
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Keisuke Kawahara
Mitsutsugu Sugimura
Keisuke Kawahara