To provide a solid-state imaging device which can surely restrain component out of smear component in which component electrons which are generated on the surface of a semiconductor substrate by incident light spread in a lateral direction along the surface of the substrate, pass a channel stop portion, and permeate a transmission channel region; and to provide a method for manufacturing the solid-state imaging device.

In the CCD solid-state imaging device, the channel stop 50 is formed along the transfer direction of a perpendicular charge transmission portion 30 at a part between a light receiving part 20 and the perpendicular charge transmission portion 30 of an adjacent light receiving part. By forming a getter 60 in the channel stop 50, electrons which are generated on the surface of the semiconductor substrate by incident light, spread in a lateral direction along the surface of the substrate, and enter the channel stop 50 of an opposite side of a read-out side are captured by the getter 60. As a result, leaking to the transmission channel region 31 is prevented surely.

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