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Patent Searching and Data


Title:
MANUFACTURING METHOD OF SUBSTRATE
Document Type and Number:
Japanese Patent JP2007194349
Kind Code:
A
Abstract:

To provide a technology for forming a combined substrate with no occurrence of voids while a sufficient bonding strength is kept at a laminate interface except for some portion.

An SOI substrate is generated by laminating, in figure 8, a first Si substrate (8001) having an SiO2surface (8002) to a second Si substrate (8003) having an Si surface, at the surface of SiO2and that of Si. Before laminating the first Si substrate (8001) to the second Si substrate (8002), the outer periphery of at least one substrate is heated (figure 8-3) for lamination.

COPYRIGHT: (C)2007,JPO&INPIT


Inventors:
MORIWAKI TAKAHARU
Application Number:
JP2006010020A
Publication Date:
August 02, 2007
Filing Date:
January 18, 2006
Export Citation:
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Assignee:
CANON KK
International Classes:
H01L21/02; H01L21/762; H01L27/12
Attorney, Agent or Firm:
西山 恵三
内尾 裕一