Title:
テラヘルツ電磁波の発生素子の製造方法
Document Type and Number:
Japanese Patent JP4785392
Kind Code:
B2
Abstract:
A fabrication method of fabricating a structure capable of being used for generation or detection of electromagnetic radiation includes a forming step of forming a layer containing a compound semiconductor on a substrate at a substrate temperature below about 300° C., a first heating step of heating the substrate with the layer in an ambience containing arsenic, and a second heating step of heating the substrate with the layer at the substrate temperature above about 600° C. in a gas ambience incapable of chemically reacting on the compound semiconductor. Structures of the present invention capable of being used for generation or detection of electromagnetic radiation can be fabricated using the fabrication method by appropriately regulating the substrate temperature, the heating time, the gas ambience and the like in the second heating step.
Inventors:
Shintaro Kasai
Satoshi Watanabe
Mitsuru Otsuka
Toshihiko Ouchi
Ohei Koide
Satoshi Watanabe
Mitsuru Otsuka
Toshihiko Ouchi
Ohei Koide
Application Number:
JP2005058438A
Publication Date:
October 05, 2011
Filing Date:
March 03, 2005
Export Citation:
Assignee:
Canon Inc
International Classes:
G02F2/02; G01J5/02; H01L21/00; H01L27/15; H01L29/26; H01L31/0248; H01L31/103; H01L31/12; H01L31/18; H01S1/02; H01S5/30; H01S5/04
Domestic Patent References:
| JP5642334A | ||||
| JP5650520A | ||||
| JP5556637A |
Other References:
Shantanu Gupta, et al. ,Ultrafast Carrier Dynamics in III-V Semiconductors Grown by Molecular-Beam Epitaxy at Very Low Substrate Temperatures,Journal of Quantum Electronics,1992年,Vol.28, No.10,p.2464-2472
A.C.Warren, et al.,Role of excess As in low-temperature-grown GaAs,Physical Review B,1992年,Vol.46, No.8,p.4617-4620
R.W.Bernstein, et al.,GaAs(100)substrate cleaning by thermal annealing in Hydrogen,Journal of Vacuum Science and Technology A,1989年,Vol.7, No.3,p.581-584
Masahiko Tani, et al.,Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs, Applied Optics,1997年,Vol.36, No.30,p.7853-7859
A.C.Warren, et al.,Role of excess As in low-temperature-grown GaAs,Physical Review B,1992年,Vol.46, No.8,p.4617-4620
R.W.Bernstein, et al.,GaAs(100)substrate cleaning by thermal annealing in Hydrogen,Journal of Vacuum Science and Technology A,1989年,Vol.7, No.3,p.581-584
Masahiko Tani, et al.,Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs, Applied Optics,1997年,Vol.36, No.30,p.7853-7859
Attorney, Agent or Firm:
Kazuo Kato