To provide a thermal type infrared sensing device capable of achieving compactness and low costs and provide its manufacturing method.

The thermal type infrared sensing device includes both a thermal type infrared sensing element 1 which is formed through the use of a first wafer (silicon wafer) and in which an infrared sensing part 13 thermally insulated from its surroundings on the side of one surface and a package 2 sealed in such a way as to surround the infrared sensing part 13 on the side of the one surface of the thermal type infrared sensing element 1. The package 2 is formed through the use of a second wafer (silicon wafer). Through hole wirings 15a and 15c electrically connected to the infrared sensing part 13 are formed in the thermal type infrared sensing element 1. The outside dimensions of the thermal type infrared sensing element 1 and the package 2 are identical. A semiconductor lens part 22 made of part of the second wafer is integrally formed in the package 2.

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