To provide a method of manufacturing a thermoelectric semiconductor used for manufacturing a highly efficient thermoelectric converter or a thermoelectric conversion device which is capable of restraining elements from becoming irregular in thermoelectric conversion properties, and to provide a method of manufacturing the thermoelectric converter and the thermoelectric conversion device.
At least, n-type thermoelectric semiconductor element material is compacted into an n-type thermoelectric semiconductor element material 1A. A low oriented region 1b located inside the compact surfaces is removed from the thermoelectric semiconductor element material 1A as thick as prescribed along the compact surface. The modified thermoelectric semiconductor element material 1A is bonded to a p-type thermoelectric semiconductor element material 12A which is manufactured in the same method as above to obtain a joined body, and the joined body is divided into paired elements 5. The large number of the paired elements 5 are tabularly bonded together. Electrodes 7 and 8 and supports 19 and 24 are fixed on the board composed of the paired elements 5 to form a thermoelectric converter 11, such as a Peltier element or the like.
COPYRIGHT: (C)2004,JPO&NCIPI
Motohisa Haga
Seiichi Miyai
Kimura Keiichi
Yasutoshi Noda
Hiroyuki Kitagawa
Yoshinori Morisaki
| JP2000138399A |
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