Title:
薄膜半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4181743
Kind Code:
B2
Inventors:
Next six Hiroaki
Mitsutoshi Miyasaka
Tetsuya Ogawa
Hidetada Tokugawa
Mitsutoshi Miyasaka
Tetsuya Ogawa
Hidetada Tokugawa
Application Number:
JP2000378960A
Publication Date:
November 19, 2008
Filing Date:
December 13, 2000
Export Citation:
Assignee:
Seiko Epson Corporation
Mitsubishi Electric Corporation
Mitsubishi Electric Corporation
International Classes:
H01L21/28; H01L21/336; H01L21/20; H01L29/423; H01L29/43; H01L29/786
Domestic Patent References:
| JP2130913A | ||||
| JP2000077333A | ||||
| JP4152574A | ||||
| JP10150202A | ||||
| JP60091624A |
Attorney, Agent or Firm:
Masahiko Ueyanagi
Osamu Suzawa
Osamu Suzawa