To provide a method for fabricating a thin film transistor exhibiting a good mobility in which a high quality oxide film is formed on a low melting point glass substrate while suppressing contraction thereof and to realize a high performance thin film transistor.

The method for fabricating a thin film transistor having a multilayer structure of a semiconductor thin film, an oxide film and a gate electrode comprises a step for forming a semiconductor thin film of polysilicon on an insulating substrate, and a step for forming an oxide film on the semiconductor thin film, wherein the step for forming an oxide film conducts a step for forming a silicon oxide film on the semiconductor thin film in combination with a first annealing step performing heat treatment in the pressure atmosphere of a gas containing oxygen atoms, and a second annealing step performing a heat treatment in a dry atmosphere is conducted following the first annealing step.

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