Title:
Manufacturing method of thin film transistor substrate, manufacturing method of display device and display device
Document Type and Number:
Japanese Patent JP6306621
Kind Code:
B2
Abstract:
The invention provides a method for manufacturing a thin film transistor substrate and application thereof. After the thin film transistor substrate is treated by a stripper composition, the volume resistivity of a curable film (organic film) is high. The mehtod for manufacturing the thin film transistor substrate at least comprises steps 1-6: a step 1: forming an organic film on at least a part of the thin film transistor substrate by using a specific curable composition; a step 2: forming an inorganic film on at least a part of the organic film; a step 3: forming a resist layer on the inorganic film; a step 4: exposing and developing the resist layer; a step 5: etching the inorganic film by using the developed resist layer; a step 6: peeling and removing the resist layer by using the specific stripper composition.
Inventors:
Tatsuya Shimoyama
Kenta Yamasaki
Kenta Yamasaki
Application Number:
JP2016026549A
Publication Date:
April 04, 2018
Filing Date:
February 16, 2016
Export Citation:
Assignee:
FUJIFILM Corporation
International Classes:
H01L21/312; G02F1/1333; G03F7/004; G03F7/022; G03F7/038; G03F7/42; H01L21/027; H01L21/304; H01L21/336; H01L29/786; H01L51/50; H05B33/10; H05B33/12; H05B33/22
Domestic Patent References:
| JP2013210607A | ||||
| JP2012088459A | ||||
| JP2011039339A | ||||
| JP2011256364A | ||||
| JP2009192937A | ||||
| JP2008040187A |
Foreign References:
| WO2010058778A1 | ||||
| US20130171415 |
Attorney, Agent or Firm:
Patent Service Corporation Taiyo International Patent Office
Yasuhiro Noguchi
Yasuhiro Noguchi
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