Title:
α線量が少ない錫又は錫合金の製造方法
Document Type and Number:
Japanese Patent JP5456881
Kind Code:
B2
Abstract:
Disclosed is tin characterized in that a sample of the tin after melting and casting has an ± dose of less than 0.0005 cph/cm 2 . Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of ± rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high purification of solder materials and tin for use in the vicinity of semiconductor devices, and demands for materials with lower ± rays. Accordingly, an object of the present invention is to clarify the phenomenon of the generation of ± rays in tin and tin alloys, and to obtain high-purity tin, in which the ± dose has been reduced, suitable for the required materials, as well as a method for producing the same.
Inventors:
Manabu Kano
Application Number:
JP2012505570A
Publication Date:
April 02, 2014
Filing Date:
February 14, 2011
Export Citation:
Assignee:
jx Nippon Mining & Metals Co., Ltd.
International Classes:
C22B25/08; C25C1/14
Domestic Patent References:
| JPH1180852A | 1999-03-26 | |||
| JPH02228487A | 1990-09-11 | |||
| JPH01283398A | 1989-11-14 | |||
| JPS5964790A | 1984-04-12 | |||
| JP2004244711A | 2004-09-02 | |||
| JPH1180852A | 1999-03-26 | |||
| JPH02228487A | 1990-09-11 | |||
| JPH01283398A | 1989-11-14 | |||
| JPS5964790A | 1984-04-12 |
Foreign References:
| WO2007004394A1 | 2007-01-11 |
Attorney, Agent or Firm:
Isamu Ogoshi