Title:
半導体デバイスおよび装置の製造方法
Document Type and Number:
Japanese Patent JP7034997
Kind Code:
B2
Abstract:
To reduce an influence of heat generation in a signal processing section.SOLUTION: A photoelectric conversion device comprises: a first semiconductor substrate 10 having a photoelectric conversion section 11 at which signal charge occurs in accordance with incident light; a second semiconductor substrate 20 having a signal processing section 22 for processing an electric signal based on the signal charge having occurred at the photoelectric conversion section 11. In the photoelectric conversion apparatus, the signal processing section 22 is located at an orthographic projection region into which projection is conducted from the photoelectric conversion section 11 to the second semiconductor substrate 20, and a multilayer film 30 including a plurality of insulator layers is provided between the first semiconductor substrate 10 and the second semiconductor substrate 20. Thickness T21 of the second semiconductor substrate 20 is less than 500 μm, and the thickness T21 of the second semiconductor substrate 20 is larger than a distance T13 between the second semiconductor substrate 20 and a light-receiving surface of the first semiconductor substrate.SELECTED DRAWING: Figure 1
Inventors:
Shimotsuka Mineo
Takeshi Ichikawa
Yasuhiro Sekine
Takeshi Ichikawa
Yasuhiro Sekine
Application Number:
JP2019176281A
Publication Date:
March 14, 2022
Filing Date:
September 26, 2019
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L27/146; H01L21/02; H01L25/065; H01L25/07; H01L25/18; H04N5/369
Domestic Patent References:
| JP2012033878A | ||||
| JP2010232593A | ||||
| JP2010514177A | ||||
| JP2011192669A | ||||
| JP2010225919A | ||||
| JP2011096851A | ||||
| JP2010258157A | ||||
| JP2010093229A | ||||
| JP2010129548A |
Attorney, Agent or Firm:
Takuma Abe
Sougo Kuroiwa
Sougo Kuroiwa