Title:
MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3148161
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To stably make a cylinder type capacitor, by forming an insulation film in trenches of a conductive film, forming steps between this insulation film and conductive film, forming insulation film side walls on the sides of the steps, removing the conductive film with leaving its bottom using the side walls as a mask, and forming lower electrodes.
SOLUTION: A manufacturing method comprises steps of forming a layer insulation film 3 and etching stopper film 2 on a semiconductor substrate 5, forming contact holes for connecting the substrate 5 to lower electrodes, forming a conductive film 1a for forming the lower electrodes, forming a resist pattern 6, etching the conductive film 1a to form a conductive film 1b, using the pattern as a mask, forming an insulation film 7 in trenches formed by etching, etching the insulation film 7a and conductive film 1c to form steps with these films 7a, 1c, and removing the film 7b to form a conductive film 1d to be lower electrodes with leaving the film 8 at the step sides.
Inventors:
Haruo Iwasaki
Application Number:
JP26025897A
Publication Date:
March 19, 2001
Filing Date:
September 25, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L21/8242; H01L27/108; (IPC1-7): H01L27/108; H01L21/8242
Domestic Patent References:
| JP9199681A | ||||
| JP9139481A | ||||
| JP4304670A | ||||
| JP77087A |
Attorney, Agent or Firm:
Nobuyuki Kaneda (2 others)