Title:
MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3566133
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To exactly position and allow the trimming by forming a low optical reflectivity region from a high optical reflectivity film which is composed of the same film as that of laser tripping fuse elements and formed into a lattice or stripe or dot pattern for irregularly reflecting lights.
SOLUTION: The surface of an Al film 105 is made rough by the influence of a polycrystalline Si dot pattern, a light applied to this part irregularly reflects, and this region becomes a low optical reflectivity region 107. The surface of the Al film 105 on a region where no polycrystalline Si dot pattern is formed is flat and becomes a high optical reflectivity region 106. The boundary between the high and low reflectivity regions 106, 107 is determined by a polycrystalline Si dot pattern made from a polycrystalline Si film 103, the same film material as that of fuse elements. Thus a fuse element region can be formed with a small area.
Inventors:
Hiroaki Takanosu
Application Number:
JP13004999A
Publication Date:
September 15, 2004
Filing Date:
May 11, 1999
Export Citation:
Assignee:
Seiko Instruments Co., Ltd.
International Classes:
B23K26/361; B23K26/351; H01L21/82; H01L23/525; H01L23/544; H01L27/01; H01L27/02; (IPC1-7): H01L21/82; B23K26/00
Domestic Patent References:
| JP2150013A | ||||
| JP2092933U |
Attorney, Agent or Firm:
Yoshiharu Matsushita