Title:
MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2001007389
Kind Code:
A
Abstract:
To suppress stresses from growing due to film thickness difference on a transparent substrate for avoiding cracks in light emitting element parts.
Surface of a GaAs substrate is epitaxially grown to form an n-type clad layer 14, an active layer 15 and a p-type clad layer 16. After adhering a p-type transparent substrate 19 to the p-type clad layer 16 surface at the room temp., the GaAs substrate is removed. At the room temp. an n-type transparent substrate 20 is adhered to the clad layer 14 surface via an n-type In0.5Ga0.5P 13. The reafter, transparent substrates 19, 20 and the clad layers 16, 14 are adhered at a high temp.
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Inventors:
YOSHITAKE HARUJI
FURUKAWA KAZUYOSHI
FURUKAWA KAZUYOSHI
Application Number:
JP17413899A
Publication Date:
January 12, 2001
Filing Date:
June 21, 1999
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L33/30; H01L33/42; H01L33/56; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)
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