Title:
MARKING METHOD FOR MONOCRYSTAL WAFER
Document Type and Number:
Japanese Patent JP2015062946
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a more efficient marking method, relating to a marking method for a monocrystal wafer which is transparent and does not absorb nitrogen visible light.SOLUTION: A marking method includes a step in which an ingot of a monocrystal semiconductor which is transparent to visible light is processed in cylindrical shape, a step in which marking is made with a constant interval along a direction running from an upper surface of the ingot toward a bottom surface, and a step in which the ingot is cut along a surface that faces the upper surface and the bottom surface, between the markings.
Inventors:
SAITO MANABU
KATO TOMOHISA
MIURA TOMONORI
KATO TOMOHISA
MIURA TOMONORI
Application Number:
JP2013199692A
Publication Date:
April 09, 2015
Filing Date:
September 26, 2013
Export Citation:
Assignee:
FUJIKURA LTD
NAT INST OF ADV IND & TECHNOL
NAT INST OF ADV IND & TECHNOL
International Classes:
B23K26/00; C30B29/38
Attorney, Agent or Firm:
Masatake Shiga
Sumio Tanai
Mitsunaga Igarashi
Toshio Komuro
Yuichiro Shimizu
Sumio Tanai
Mitsunaga Igarashi
Toshio Komuro
Yuichiro Shimizu