Title:
MASK ALIGNMENT METHOD IN SEMICONDUCTOR DEVICE MANUFACTURING PROCESS AND PHOTO MASK USED FOR ITS EXECUTION
Document Type and Number:
Japanese Patent JPS53112673
Kind Code:
A
Abstract:
PURPOSE:To increase the degree of close adhesion, by forming grooves on the pattern surface side and by taking the negative pressure in the space between the substrate and mask formed with the grooves negative.
Inventors:
FUKUDA HISASHI
Application Number:
JP2744777A
Publication Date:
October 02, 1978
Filing Date:
March 12, 1977
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
G03F1/60; H01L21/027; H01L21/302; H01L21/68; (IPC1-7): H01L21/302; H01L21/68
Domestic Patent References:
| JPS52153669A | 1977-12-20 |
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