Title:
MASK BLANK, PRODUCTION METHOD OF TRANSFER MASK, AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023145473
Kind Code:
A
Abstract:
To provide a mask blank comprising a hard mask film being suitable for a high bias etching condition and having excellent performance, and capable of achieving further fine patterns which should be formed on a thin film for pattern formation and improving pattern quality.SOLUTION: A mask blank 100 comprises a structure in which, on a substrate 1, a thin film 3 for pattern formation and a hard mask film 4 are stacked in this order. The hard mask film 4 is configured so that a narrow spectrum of Si2p obtained by analyzing by X-ray photoelectron spectroscopy has a maximum peak at binding energy of 103 eV or greater, the hard mask film 4 is configured so that the maximum peak of the narrow spectrum of N1s obtained by analyzing using the X-ray photoelectron spectroscopy is equal to or less than a detection lower limit value, and the hard mask film 4 is configured so that an inclusion ratio (atom%) of silicon and oxygen shows Si:O=1:less than 2.SELECTED DRAWING: Figure 1
Inventors:
SHISHIDO HIROAKI
OKUBO RYO
NOZAWA JUN
OKUBO RYO
NOZAWA JUN
Application Number:
JP2023111188A
Publication Date:
October 11, 2023
Filing Date:
July 06, 2023
Export Citation:
Assignee:
HOYA CORP
International Classes:
G03F1/32; G03F1/54; G03F1/80; H01L21/3065
Attorney, Agent or Firm:
Yasuo Fujimura
Previous Patent: Temperature adjustable multi-zone electrostatic chuck
Next Patent: Photodetection elements, image sensors and semiconductor films
Next Patent: Photodetection elements, image sensors and semiconductor films