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Title:
MASK BLANKS FOR ELECTRON BEAM EXPOSURE
Document Type and Number:
Japanese Patent JPS5830127
Kind Code:
A
Abstract:
PURPOSE:To obtain a high-precision electronographic pattern by forming a layer of Cr or Cr2O3 at the side surfaces of a glass substrate to improve earth effect. CONSTITUTION:A surface layer 3 on a glass substrate 1 is composed of Cr or Cr2O3, and on the side surfaces a layer 4 of Cr or Cr2O3 is formed. More than 90% of the side surfaces should be covered with this layer. When the electronography is performed with the side layer 4 grounded, the formation of a minimal pattern can be made with high precision.

Inventors:
TSUCHIYA NOBUJI
Application Number:
JP12755081A
Publication Date:
February 22, 1983
Filing Date:
August 14, 1981
Export Citation:
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Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
C03C17/06; H01L21/027; (IPC1-7): C03C17/00
Domestic Patent References:
JPS5596951A1980-07-23
JPS5487479A1979-07-11
JPS5756842A1982-04-05
Attorney, Agent or Firm:
Takehiko Suzue



 
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