Title:
MASK FOR ELECTRON BEAM PROJECTION LITHOGRAPHY AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2002170759
Kind Code:
A
Abstract:
To provide a mask for electron beam projection lithography which is prevented from warping by relieving stresses which are generated at the time of manufacturing the mask and irradiating the mask with an electron beam and, consequently, can improve the positional accuracy of a transfer pattern.
This mask for electron beam projection lithography is composed of a first silicon substrate 23 on which the transfer pattern 24 is formed, and support-side second silicon substrates 21 stuck to the first substrate 23. In this mask, slits 25 are formed in the portions of the first substrate 23 positioned on the support areas 21a of the second substrates 21.
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Inventors:
OBA FUMIHIRO
Application Number:
JP2000366649A
Publication Date:
June 14, 2002
Filing Date:
December 01, 2000
Export Citation:
Assignee:
NEC CORP
International Classes:
B81C1/00; G03F1/20; H01L21/027; (IPC1-7): H01L21/027; B81C1/00; G03F1/16
Attorney, Agent or Firm:
Yasuyuki Hata