MASK FOR EXPOSURE, SEMICONDUCTOR DEVICE PRODUCED BY USING THE SAME AND METHOD OF CREATING MASK DATA

Title:

MASK FOR EXPOSURE, SEMICONDUCTOR DEVICE PRODUCED BY USING THE SAME AND METHOD OF CREATING MASK DATA

Document Type and Number:

Japanese Patent JP2014211554

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To achieve improvement of the focal depth and high dimension uniformity at the same time.SOLUTION: A mask for exposure of a semiconductor device includes a line-and-space pattern in which a plurality of device patterns having a specified width and extending in a first direction are arranged at specified pitches and auxiliary patterns arranged in the proximity of the line-and-space pattern. The auxiliary patterns consist of a plurality of non-resolution auxiliary patterns which are arranged in regions where the device patterns are extended in the first direction so as to be separated from the end parts of the auxiliary patterns and extend in parallel with the first direction. Alternatively, the auxiliary patterns may be arranged in regions where the device patterns are extended in the first direction so as to be separated from the end parts of the auxiliary patterns and extend in a second direction perpendicular to the first direction.

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Inventors:

ASANAO SHUNSUKE

Application Number:

JP2013088222A

Publication Date:

November 13, 2014

Filing Date:

April 19, 2013

Export Citation:

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Assignee:

PS4 LUXCO SARL

International Classes:

G03F1/70; G03F1/36; H01L21/027

Attorney, Agent or Firm:

Noriyasu Ikeda
Shuichi Fukuda
Takashi Sasaki

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