To provide a mask which can increase the speed of lithography processing by making it possible to perform double-exposure operation using a combination of different phase shit methods without replacing a mask, and its manufacturing method and exposing device.

The mask 1 has at least two exposure patterns parts 2 and 3 and is used to form a desired pattern image by exposing the exposure pattern parts to an exposed body; and the mask has a 1st exposure area 2 having a Levenson phase shift pattern so formed that light beams passing through two adjacent light transmission parts have a phase difference and a 2nd exposure area having a half-tone phase shift pattern so formed that a light transmission part and a translucent part having specific light transmissivity are formed and light beams passing through the light transmission part and translucent part have a phase difference.