PURPOSE: To provide a mask for transfer with which the variations in transfer line widths occurring in a transfer system are decreased with the mask for production of materials to be formed with the pattern of semiconductor devices and a process for producing this mask.

CONSTITUTION: There is a tendency that a film thickness distribution changes by a resist temp. and the thickness of the central part of a wafer increases at a temp. higher than 24°C and decreases at a temp. lower than 23.5°C in the case of spin coating the wafer with a resist. On the other hand, the sensitivity lowers and the line width diminishes when the film thickness increases regardless of the type of the resist and, therefore, the transfer line width is controlled by utilizing such characteristics. The line width is smaller at the center than on the periphery as a result of spin coating of a mask blank of a transparent quartz substrate formed with a Cr film over the entire surface with the positive type resist at 30 to 40°C slightly higher than room temp. and exposing of the thin film thickness on the periphery with an optimum exposure, followed by developing. Next, the influence of curvature of field is negated and the line width uniform within the exposed surface is obtained as the result of transferring of the patterns to the wafer by using such mask for transfer.