Title:
MASK FOR SELECTIVE GROWTH AND METHOD FOR GROWING THIN FILM WITH THE SAME
Document Type and Number:
Japanese Patent JPH05279180
Kind Code:
A
Abstract:
PURPOSE:To eliminate the fluctuation of the thickness and composition of the thin film by growing the crystal of a semiconductor with a specific mask for the selective growth of the crystal. CONSTITUTION:The first thin film 22 comprising a dielectric substance thin film is formed on a substrate 21, and the second dotted thin film 24 used as the nuclei for the growth of semiconductor crystals to be formed and grown on the thin film 22 are formed on the first thin film 22. A resist mask 25 is formed, and then the thin film 24 is selectively removed while using the mask 25 as a mask. The thin film 22 is selectively removed, and the resist mask 25 is removed to form a selective growth mask 27 having a selective growth window 26. The selective growth layer 28 of the semiconductor is formed while using the mask 27 as a mask, and polycrystals 30 containing the dotted thin layer as the nuclei grow on the mask 27. Subsequently, the mask 27, the thin films 22, 24 and the polycrystals 30 are removed.
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Inventors:
Susumu Kondo
Etsuo Noguchi
Etsuo Noguchi
Application Number:
JP10409992A
Publication Date:
October 26, 1993
Filing Date:
March 31, 1992
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
C30B25/02; C23C16/04; C30B25/04; (IPC1-7): C30B25/04; C30B25/02
Attorney, Agent or Firm:
Masaki Yamakawa