PURPOSE: To provide a process for producing a semiconductor device, etc., cable of forming multilayered wiring electrodes having good shapes on differences in level without increasing the number of stages.

CONSTITUTION: The shapes of first, second master masks 1, 2 for forming the lower and upper layer wiring electrodes are formed by a graphic forming section 12 according to the design information from a design information storage section 11. The information l that the upper layer wiring electrodes intersect with at least one lower layer wiring electrodes is fetched out of the design information storage section 11 by an intersection information fetching section 13. The width of the second master mask 2 for forming the upper layer wiring electrodes is so corrected as to be changed in the parts where both intersect and the parts where both do not intersect by a correcting section 14. The width of the master mask is set finer than a standard value in the parts where the electrodes do not intersect in the case of, for example, the positive type master mask, by which the expansion of the photoresist mask in the bottoms at the differences in level by deficiency of exposure is prevented and the bridge defect and disconnection defect of the upper layer wiring electrodes are prevented.