Title:
MATERIAL AND METHOD FOR PLASMA ETCHING ALUMINUM AND ALUMINUMALLOY
Document Type and Number:
Japanese Patent JPS59134833
Kind Code:
A
Abstract:
A method for etching a layer of aluminum or aluminum alloy on a semiconductor wafer using the steps: disposing the wafer on one of a pair of electrode structures in a closed chamber; communicating into the chamber a reactive gas mixture comprising a principal gas mixture of BCl3 and Cl2 and a dopant gas of oxygen and fluorocarbon gas; and supplying radio frequency electrical energy to one of the electrode structures to create a plasma of the reactive gas mixture for etching the aluminum layer.
Inventors:
DEIBUITSUDO NIN KOU WAN
FURANKU DEI EJITSUTO
DANIERU MEIDAN
FURANKU DEI EJITSUTO
DANIERU MEIDAN
Application Number:
JP20685383A
Publication Date:
August 02, 1984
Filing Date:
November 02, 1983
Export Citation:
Assignee:
APPLIED MATERIALS INC
International Classes:
C23F1/00; C23F4/00; H01L21/302; H01L21/3065; H01L21/3213; (IPC1-7): C23F1/00; H01L21/302
Domestic Patent References:
| JPS5521594A | 1980-02-15 | |||
| JPS54158343A | 1979-12-14 | |||
| JPS54109387A | 1979-08-27 |
Attorney, Agent or Firm:
Minoru Nakamura (3 others)