核生成抑制コーティングを形成するための材料およびそれを組み込んだデバイス

Title:

核生成抑制コーティングを形成するための材料およびそれを組み込んだデバイス

Document Type and Number:

Japanese Patent JP7425480

Kind Code:

B2

Abstract:

An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I)

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Inventors:

Chan, E-Lou
Wan, Qi
Genin, Scott Nicholas
Herlander, Michael
Chiu, Jackie
One, Jibin
Roussard, Benoit H.

Application Number:

JP2020541978A

Publication Date:

January 31, 2024

Filing Date:

February 01, 2019

Export Citation:

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Assignee:

OTI LUMIONICS INC.

International Classes:

H10K71/16; C07C15/27; C07C25/22; C07C43/21; C07C43/225; C23C14/24; H10K50/10; H10K50/805; H10K59/10; H10K71/60; H10K85/60

Domestic Patent References:

JP2008214332A
JP2012119592A
JP2016502734A
JP2018533183A

Foreign References:

WO2017072678A1
US20170117478

Attorney, Agent or Firm:

Shusaku Yamamoto
Natsuki Morishita
Takatoshi Iida
Daisuke Ishikawa
Kensaku Yamamoto

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