Title:
MEASUREMENT OF SUBSTRATE TEMPERATURE AND CRYSTAL GROWTH METHOD AND APPARATUS FOR SEMICONDUCTOR THIN FILM UTILIZING THE SAME
Document Type and Number:
Japanese Patent JPH02212726
Kind Code:
A
Abstract:
PURPOSE:To improve yields with accurate control of a temperature of a substrate crystal by measuring a substrate temperature collating a transmission spectrum data and an existing data of dependency on temperature of a band gap of a substrate material. CONSTITUTION:Light emitted from a white light source 3 is transmitted through a substrate crystal and condensed with a condenser lens 5 to make a transmission beam. The beam 6 is diffracted by a spectroscope 7 and inputted into a photodetector 8 to perform a spectral analysis. A wavelength corresponding to a transmissivity is detected using a computer 9 from a transmission spectrum. Then, a substrate temperature is calculated from an existing data of dependency on temperature of a band gap stored in the computer 9 and the results are shown on a display device. This measurement is accomplished momentarily, thereby enabling measurement of the temperature of a substrate almost in real time.
Inventors:
HORIKOSHI YOSHIHARU
Application Number:
JP3283189A
Publication Date:
August 23, 1990
Filing Date:
February 14, 1989
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
G01K11/12; H01L21/203; H01L21/205; (IPC1-7): G01K11/12; H01L21/203; H01L21/205
Attorney, Agent or Firm:
Yoshikazu Tani