Title:
MEASURING METHOD FOR CHARACTERISTIC OF SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JPS57157535
Kind Code:
A
Abstract:
PURPOSE:To measure the life of carriers in several wafer by using a diode formed at the necessary position of one wafer having a large number of PN junctions. CONSTITUTION:When the P type gate layer of SCR elements 11 is formed onto the wafer 10, a window having an area larger than a window for shaping an N type cathode layer is formed to an oxide film 14 when two arbitrary positions are coated with the oxide film 14 and the cathode layer is shaped, N layers 12 are molded to said two positions and the N layer is formed in the same size as the elements 11. Predetermined electrodes 15-18 are attached. All have the life of the same carrier because each element 11 and the diodes 12 are shaped under the same condition in such constitution. Accordingly, when probes 19, 20 are erected to the diodes 12 and the life of the carriers is measured about one piece or more, the life of the carriers of other SCR elemens 11 can be measured accurately.
Inventors:
ASANO KENJIROU
Application Number:
JP4337681A
Publication Date:
September 29, 1982
Filing Date:
March 24, 1981
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
G01R31/26; G01R31/316; H01L21/66; (IPC1-7): G01R31/26; H01L21/66
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