Title:
MEASURING METHOD FOR CONCENTRATION PROFILE
Document Type and Number:
Japanese Patent JP3266050
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a measuring method in which the two-dimensional distribution of a dopant concentration in the diffusion layer of a semiconductor device can be measured with good reliability even in a high-concentration region.
SOLUTION: A semiconductor substrate 1 is etched by an etchant whose etching amount of a semiconductor depends on its dopant concentration. A filler 3 is filled so as to bury an etched shape. The filler 3 is separated from the semiconductor substrate 1, and the shape of the filler 3 is measured. Data which indicates an etching amount with reference to the dopant concentration is established in advance. The dopant concentration is computed from the measured shape of the filler 3 on the basis of the data, and a profile is obtained.
More Like This:
Inventors:
Kameyama Akiko
Application Number:
JP13512897A
Publication Date:
March 18, 2002
Filing Date:
May 26, 1997
Export Citation:
Assignee:
NEC
International Classes:
G01N1/28; G01N1/32; G01Q30/08; G01Q30/20; G01Q60/10; G01Q60/24; H01L21/66; G01Q80/00; (IPC1-7): G01N1/28; G01N1/32; H01L21/66
Domestic Patent References:
| JP4111337A | ||||
| JP2112253A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)