Title:
MEHTOD AND APPARATUS FOR PRODUCING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH05254979
Kind Code:
A
Abstract:
PURPOSE:To suppress the generation of lineage defects by specifically controlling the temp. gradient in the perpendicular direction of the raw material melt part in a boat and suppressing the melt convection generated in the melt at the time of producing the compd. semiconductor single crystal by a boat method. CONSTITUTION:A resistance-heating type auxiliary heater is provided in addition to a main heater for heating a single crystal in a linear shape over the entire length in a longitudinal direction in the upper part within a furnace on the high temp. side of a peep window for observing the crystal at the time of producing the compd. semiconductor single crystal by the boat method. The raw material is then melted in the boat 3 to form the melt 6 and thereafter, the single crystal 5 is grown by a horizontal Bridgman method, etc. The temp. gradient in the perpendicular direction of the raw material melt part 6 is so set by adjusting the output of the auxiliary heater that the temp. 2 in the upper part is higher than the temp. 1 in the lower part, by which the melt convection generated in the melt part 6 is suppressed. As a result, the large-sized and long-sized single crystal is produced with good reproducibility while the shape of the solid-liquid boundary is maintained adequately.
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Inventors:
Kazuyuki Ishihara
Makoto Sato
Koichi Murata
Kenji Oda
Saito Tsunehiro
Jiro Nishihama
Makoto Sato
Koichi Murata
Kenji Oda
Saito Tsunehiro
Jiro Nishihama
Application Number:
JP8998592A
Publication Date:
October 05, 1993
Filing Date:
March 13, 1992
Export Citation:
Assignee:
Asahi Glass Co., Ltd.
International Classes:
C30B11/00; C30B29/42; C30B29/48; H01L21/208; (IPC1-7): C30B11/00; C30B29/42
Attorney, Agent or Firm:
Kenji Izumina