Title:
MEMBER FOR EXHAUST GAS TREATING APPARATUS FROM SEMICONDUCTOR AND LIQUID CRYSTAL MANUFACTURING DEVICE
Document Type and Number:
Japanese Patent JP2012229459
Kind Code:
A
Abstract:
To provide a member for an exhaust gas treating apparatus which has an excellent corrosion resistance to the high-temperature corrosion by a PFC gas, and weight-saves and miniaturizes the exhaust gas treating apparatus.
The member for an exhaust gas treating apparatus from a semiconductor and a liquid crystal manufacturing device is such that a Ni-Al alloy layer is formed to a surface of a base material, wherein the material of the base material is a Ni-Cr-Mo alloy or a Ni-Cr-Fe alloy, the Ni-Al layer has the thickness of 10-200 μm, and the composition includes 10-60 wt.% of Al, at least 25 wt.% of the total content of Co, Mo, Fe and W, and a remainder consisting of Ni and inevitable impurities.
More Like This:
Inventors:
SUGAWARA KATSUO
Application Number:
JP2011096824A
Publication Date:
November 22, 2012
Filing Date:
April 25, 2011
Export Citation:
Assignee:
MMC SUPERALLOY CORP
International Classes:
C22C19/05; B01D53/46; B01D53/68; B01D53/70; C22C19/03; C22C21/00; C23C10/48
Domestic Patent References:
| JP2006028566A | 2006-02-02 | |||
| JP2004269946A | 2004-09-30 | |||
| JPH10219426A | 1998-08-18 |
Attorney, Agent or Firm:
Kageyama Shuichi
Kazuo Tomita
Masayuki Miyake
Kazuo Tomita
Masayuki Miyake