ＥＵＶリソグラフィ用のメンブレン

Japanese Patent JP7126032

B2

The invention concerns a membrane for EUV lithography. The membrane comprises a base layer. The base layer comprises one or more of the following: a stable stoichiometry of Mo and Si, a stable stoichiometry of Ru and Si, a stable stoichiometry of Zr and Si, a stable stoichiometry of La and Si, a stable stoichiometry of Y and Si, and a stable stoichiometry of Nb and Si. The membrane further comprises a capping layer providing an outer surface of the membrane. The invention further concerns a pellicle assembly comprising the membrane of the invention, a patterning device assembly comprising the pellicle assembly of the invention, and a dynamic gas lock assembly comprising the membrane of the invention.

Nazarevich, Maxim, Alexandrovich
Abegg, eric, achilles
Bunergy, Nirpam
Blau, Michelle, Alexander
Browns, derk, zervertius, gaiterda
Janssen, Paul
Klyutzinga, Matthias
Renderlink, Egbert
Maxim, Nikolae
Niki Perov, Andrei
Notten Boom, Arnaud, Willem
Pliego, Claudia
Maria, Peter
Respence, gaith belt
Shoo, Naja
Van der Kerkhof, Marcus, Adrianus
Van der Zande, Willem, Joan
Van Zvor, Peter-Jean
Verberg, antonius, willem
Vermehren, Johannes, Petras, Martinus, Bernardos
Vres, david, ferdinand
Fault Heisen, Willem-Peter
Tudravkov, Alexander, Nikolov

JP2022003245A

August 25, 2022

January 12, 2022

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ASM L Netherlands B.V.

G03F1/62; G03F7/20

JP2009282298A
JP11109608A
JP2016021078A
JP2016539372A

WO2016001351A1
WO2015178250A1
WO2014154452A1
WO2015082214A1
WO2013152921A1

Yoshiyuki Inaba
Toshifumi Onuki
Akihiko Eguchi
Kazuhiko Naito

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