Title:
MEMORY CELL HAVING ELECTRIC FIELD PROGRAMMABLE MEMORY ELEMENT AND OPERATING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP2005294826
Kind Code:
A
Abstract:
To provide a memory cell having an access transistor and an electric field programmable bistable element.
An access transistor 12 is a MOSFET having a gate region 16, a source region 18, or a drain region 20 coupled to an electric field programmable bistable element 14. The access transistor 12 facilitates selective and controllable programming and reading of the electric field programmable bistable element 14. Furthermore, multiple memory cells, each of which has a distinct electric field programmable bistable element 14 connected to a common access transistor, and a differential memory cell which stores complementary data states are also disclosed.
Inventors:
GREER EDWARD C
MURPHY ROBERT J
SZMANDA CHARLES R
MURPHY ROBERT J
SZMANDA CHARLES R
Application Number:
JP2005083338A
Publication Date:
October 20, 2005
Filing Date:
March 23, 2005
Export Citation:
Assignee:
ROHM & HAAS
International Classes:
G11C11/22; G11C11/56; G11C13/00; G11C13/02; H01L27/10; H01L27/105; H01L45/00; (IPC1-7): H01L27/10; G11C11/22; H01L45/00
Attorney, Agent or Firm:
Minoru Senda
Koji Hashimoto
Koji Hashimoto