To provide a nonvolatile memory circuit with a novel structure.

A memory circuit includes a first memory circuit, a second memory circuit, a first switch, a second switch, and a phase inversion circuit. The first memory circuit includes a first transistor formed using an oxide semiconductor film, a second transistor, a third transistor, and a capacitor. A nonvolatile memory circuit is formed using the first transistor formed using the oxide semiconductor film, and the capacitor. The nonvolatile memory circuit with small circuit scale can be achieved by reducing the number of power supply lines and signal lines connected to the memory circuit and reducing the number of transistors used in the memory circuit.