Title:
MEMORY DEVICE, CPU, AND ELECTRONIC APPARATUS
Document Type and Number:
Japanese Patent JP2022044110
Kind Code:
A
Abstract:
To provide a memory device that operates at high speed and allows the reading of data held in a memory cell with high accuracy.SOLUTION: A memory device includes a memory cell, and the memory cell includes a first transistor and a second transistor. The first transistor includes a first gate, a second gate, a first gate insulating layer, and a second gate insulating layer. The first gate insulating layer is a gate insulating layer to the first gate and the second gate insulating layer is a gate insulating layer to the second gate. The first gate insulating layer has ferroelectricity. The first transistor has one of a source or a drain electrically connected to one of a source or a drain of the second transistor. The second gate is electrically connected to the other of the source or the drain of the second transistor.SELECTED DRAWING: Figure 3
More Like This:
Inventors:
MATSUZAKI TAKANORI
ONUKI TATSUYA
SAITO SEIYA
HAYASHI KENTARO
ONUKI TATSUYA
SAITO SEIYA
HAYASHI KENTARO
Application Number:
JP2020149568A
Publication Date:
March 17, 2022
Filing Date:
September 07, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L27/1159; G11C11/22; H01L21/8234; H01L27/088; H01L27/11507; H01L27/11509; H01L27/11514; H01L27/11592; H01L27/11597; H01L29/786