MEMORY DEVICE CAPABLE OF REDUCING PROGRAM FAILURE AND ERASING METHOD THEREFOR

Title:

MEMORY DEVICE CAPABLE OF REDUCING PROGRAM FAILURE AND ERASING METHOD THEREFOR

Document Type and Number:

Japanese Patent JP2023001227

Kind Code:

A

Abstract:

To provide a memory device capable of reducing program failures and an erasing method therefor.SOLUTION: An erasing method is used in a memory device. The memory device includes a string of memory cells and a controller, and the string of the memory cells includes a plurality of special memory cells which are not provided for data storage and a plurality of main memory cells which are provided for data storage. The erasing method includes: the step by which the controller verifies whether or not at least one of the plurality of special memory cells is faulty; the step by which the controller resets the at least one of the special memory cells when the at least one of the special memory cells is faulty; and the step by which the controller erases the plurality of main memory cells.SELECTED DRAWING: Figure 3

Inventors:

Tian Tan
Shan Hu

Application Number:

JP2022175633A

Publication Date:

January 04, 2023

Filing Date:

November 01, 2022

Export Citation:

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Assignee:

Yangtze Memory Technologies Co.,Ltd.

International Classes:

G11C16/34; G11C16/14

Attorney, Agent or Firm:

Murayama Yasuhiko
Shinya Mihiro
Tatsuhiko Abe

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