Title:
Memory device
Document Type and Number:
Japanese Patent JP5976608
Kind Code:
B2
Abstract:
According to one embodiment, a memory device includes a nonvolatile semiconductor memory, a management unit, and a control unit. The nonvolatile semiconductor memory has a plurality of physical storage areas that includes a user area externally accessible and are divided into plurality of management units. The control unit is configured to control the nonvolatile semiconductor memory. The control unit receives a control command having a first argument to designate a sequential write area and a read command or a write command, assigns a management unit represented by an address of the read command or the write command as the sequential write area, and changes memory access control by judging whether an address of a memory access command to access the user area indicates access in the sequential write area whose size is equivalent to the management unit.
Inventors:
Yohisa Fujimoto
Application Number:
JP2013166804A
Publication Date:
August 23, 2016
Filing Date:
August 09, 2013
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G06F12/00; G06F3/08; G06F12/02; G06K7/00; G06K19/07
Domestic Patent References:
| JP2006040264A |
Attorney, Agent or Firm:
Kurata Masatoshi
Yoshihiro Fukuhara
Makoto Nakamura
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Takao Ako
Tadashi Inoue
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Yoshihiro Fukuhara
Makoto Nakamura
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Takao Ako
Tadashi Inoue
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi