MEMORY ELEMENT - TOSHIBA MEMORY CORP

Title:

MEMORY ELEMENT

Document Type and Number:

Japanese Patent JP2019057540

Kind Code:

A

Abstract:

To provide a memory element capable of improving data retention characteristics.SOLUTION: The memory element comprises a first conductive film including an ion source, a second conductive film and a first layer. The first layer provided between the first conductive film and the second conductive film includes a first element having an electronegativity of more than 2 and includes a first region including the first element and a second region provided between the first region and the second conductive film. The second region does not include the first element or includes the first element, and the concentration of the first element in the first region is higher than that of the first element in the second region.SELECTED DRAWING: Figure 1

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Inventors:

ZHAO DAN-DAN
ICHIHARA REIKA
SAKUMA YU
MITANI YUICHIRO

Application Number:

JP2017179542A

Publication Date:

April 11, 2019

Filing Date:

September 19, 2017

Export Citation:

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Assignee:

TOSHIBA MEMORY CORP

International Classes:

H01L21/8239; H01L27/105; H01L45/00; H01L49/00

Attorney, Agent or Firm:

Masahiko Hinataji
Junichi Kozaki
Hiroshi Ichikawa
Tatsutetsu Shirai

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