Title:
MEMORY HAVING CONTACT PLUG OF RUTHENIUM MATERIAL AND ITS FABRICATING METHOD
Document Type and Number:
Japanese Patent JP2003209224
Kind Code:
A
Abstract:
To provide a memory having a contact plug of ruthenium material, and its fabricating method, for improving the contact arrangement between a storage node and a device zone in the dynamic RAM (DRAM) and the ferroelectric RAM (FRAM (trade mark)) of a memory device, for example.
The method for fabricating a memory comprises a step for forming a first insulation layer (1) on a wafer, a step for forming at least one through hole (10) in the first insulation layer (1), a step for forming a contact plug (4) of one kind of ruthenium material selected from ruthenium, conductive ruthenium oxide, and a laminate of them in the through hole (10), and a step for forming a capacitor to touch the contact plug (4).
More Like This:
Inventors:
KYO HAKUJO
SHU SOMEI
KO MEISU
YANG MIN-CHIEH
RYU BUNCHU
WANG JONG-BOR
SUN PAI-HSUAN
SHU SOMEI
KO MEISU
YANG MIN-CHIEH
RYU BUNCHU
WANG JONG-BOR
SUN PAI-HSUAN
Application Number:
JP2002002441A
Publication Date:
July 25, 2003
Filing Date:
January 09, 2002
Export Citation:
Assignee:
HUABANG ELECTRONIC CO LTD
International Classes:
H01L27/105; H01L21/8242; H01L21/8246; H01L27/108; (IPC1-7): H01L27/105; H01L21/8242; H01L27/108
Attorney, Agent or Firm:
Kimura Takahisa
Previous Patent: SEMICONDUCTOR ELEMENT AND ITS FABRICATING METHOD
Next Patent: METHOD OF MANUFACTURING SILICON CRYSTALLINE THIN FILM
Next Patent: METHOD OF MANUFACTURING SILICON CRYSTALLINE THIN FILM