Title:
MEMORY SYSTEM HAVING SWITCH ELEMENT
Document Type and Number:
Japanese Patent JP2013118043
Kind Code:
A
Abstract:
To provide a memory system comprising a MIM memory and a phase change memory, which can achieve a low cost of manufacturing, improve a yield, and reduce a memory cost.
A memory system comprises the steps of: forming a switch element comprising a first side and a second side; forming a cell transistor 106 comprising a gate terminal 108; forming a memory cell 102 comprising the gate terminal 108 connected to the second side and having the switch element and the cell transistor 106; connecting a word line 118 and the memory cell 102 at the first side; connecting a bit line 126 and the memory cell 102; and connecting a reference source and the memory cell 102.
Inventors:
TAGUCHI MASAO
Application Number:
JP2013012195A
Publication Date:
June 13, 2013
Filing Date:
January 25, 2013
Export Citation:
Assignee:
SPANSION LLC
International Classes:
G11C13/00; H01L27/105; H01L45/00; H01L49/00; H01L49/02
Domestic Patent References:
| JP2009538491A | 2009-11-05 |
Foreign References:
| US20060098473A1 | 2006-05-11 |
Other References:
JPN6014040959; Ａｎ Ｃｈｅｎ， Ｓａｍｅｅｒ Ｈａｄｄａｄ， Ｙｉ-Ｃｈｉｎｇ （Ｊｅａｎ） Ｗｕ， Ｔｚｕ-Ｎｉｎｇ Ｆａｎｇ， Ｚｈｉｄａ Ｌａｎ， Ｓｔｅｖｅｎ Ａｖａｎｚｉｎｏ， ＳｕｚｅｔｔｅＰａｎｇｒｌ: 'Ｎｏｎ-Ｖｏｌａｔｉｌｅ Ｒｅｓｉｓｔｉｖｅ Ｓｗｉｔｃｈｉｎｇ ｆｏｒ Ａｄｖａｎｃｅｄ Ｍｅｍｏｒｙ Ａｐｐｌｉｃａｔｉｏｎｓ' ＩＥＥＥ Ｉｎｅｔｅｎａｔｉｏｎａｌ Ｅｌｅｃｔｒｏｎ Ｄｅｖｉｃｅｓ Ｍｅｅｔｉｎｇ， ２００５． ＩＥＤＭ Ｔｅｃｈｎｉｃａｌ Ｄｉｇｅｓｔ , 20051205, ｐｐ．７４６-７４９, Ｉÿ
Attorney, Agent or Firm:
Yoshiyuki Inaba
Toshifumi Onuki
Toshifumi Onuki