Title:
MEMORY USING MIXED VALENCE CONDUCTIVE OXIDES
Document Type and Number:
Japanese Patent JP2012238893
Kind Code:
A
Abstract:
To provide a memory using a mixed valence conductive oxides.
An embodiment comprises: a mixed valence conductive oxide oxygen reservoir 635 conductive in its non-oxidized state and less conductive in its oxygen-deficient state; and an electrolytic tunnel barrier 505 which is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.
Inventors:
RENERSON DURREL
CHRISTOPHE J CHEVALLIER
WAYNE KINNEY
ROY LAMBERTSON
LONGCOE STEVEN W
JOHN E SANCHEZ JR
LAWRENCE SCHLOSS
PHILIP F S SWAB
WARD EDMONDS R
CHRISTOPHE J CHEVALLIER
WAYNE KINNEY
ROY LAMBERTSON
LONGCOE STEVEN W
JOHN E SANCHEZ JR
LAWRENCE SCHLOSS
PHILIP F S SWAB
WARD EDMONDS R
Application Number:
JP2012175072A
Publication Date:
December 06, 2012
Filing Date:
August 07, 2012
Export Citation:
Assignee:
UNITY SEMICONDUCTOR CORP
International Classes:
H01L27/105; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Meisei International Patent Office
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