Title:
酸化物スイッチング層を有するメモリスタ
Document Type and Number:
Japanese Patent JP6469215
Kind Code:
B2
Abstract:
An example memristor includes a first conductive layer, a switching layer, and a second conductive layer. The first conductive layer may include a first conductive material and a second conductive material. The second conductive material may have a higher diffusivity than the first conductive material. The switching layer may be coupled to the first conductive layer and may include a first oxide having the first conductive material and a second oxide having the second conductive material. The second conductive layer may be coupled to the switching layer.
Inventors:
Jae, Nin
Yang, Gianhwa
Lee
Chang, Max
Samuels, Katie
Yang, Gianhwa
Lee
Chang, Max
Samuels, Katie
Application Number:
JP2017516396A
Publication Date:
February 13, 2019
Filing Date:
September 30, 2014
Export Citation:
Assignee:
Hewlett-Packard Development Company
Hewlett-Packard Development Company, L.P.
Hewlett-Packard Development Company, L.P.
International Classes:
H01L21/8239; B41J2/14; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| JP2009071304A |
Foreign References:
| US20080220601 | ||||
| US20130106930 |
Other References:
Ya-Ting Wu et al.,Resistance switching of thin AlOx and Cu-doped-AlOx films,Thin Solid Films,米国,Elsevier,2013年10月 1日,Vol.544,pp.24-27
Attorney, Agent or Firm:
Satoshi Furuya
Akihiro Onishi
Kiyoharu Nishiyama
Rei Hosoi
Akihiro Onishi
Kiyoharu Nishiyama
Rei Hosoi