Title:
MEMS DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2011009446
Kind Code:
A
Abstract:
To improve both the reliability of a MEMS element and the characteristics of a MIM element.
The MEMS device includes: the MEMS element 10, including a first lower electrode 12 provided on a substrate 1, a first insulator 20 which is provided on the first lower electrode 12 and has a first thickness t1, and a movable first upper electrode 16 supported by an anchor in midair above the first lower electrode 12; and a capacitance element 50, including a second lower electrode 52 provided on the substrate 1, a second insulator 25 which is provided on the second lower electrode 52 and has a second thickness t2, and a second upper electrode 54 provided on the second insulator 25. The second thickness t2 is less than the first thickness t1.
Inventors:
YAMAZAKI HIROAKI
Application Number:
JP2009151246A
Publication Date:
January 13, 2011
Filing Date:
June 25, 2009
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01G7/00; B81B3/00; B81C1/00
Attorney, Agent or Firm:
Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Tetsuya Kazama
Katsumura Hiro
Shoji Kawai
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Tetsuya Kazama
Katsumura Hiro
Shoji Kawai
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen
Previous Patent: COMMON MODE CHOKE COIL
Next Patent: NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Next Patent: NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME