Title:
MEMS DEVICE
Document Type and Number:
Japanese Patent JP2011066150
Kind Code:
A
Abstract:
To achieve a MEMS device that suppresses characteristic deterioration due to a creep phenomenon.
The MEMS device includes: electrodes 11, 12 provided on a substrate 9; a movable structure 2 which is supported in midair above the electrodes 11, 12 by first and second anchor portions provided on the substrate 9, and moves toward the electrodes 11, 12; a spring structure which connects the anchor portion to the movable structure 2 and uses a ductile material; and a spring structure 45 which connects the anchor portion 52 to the upper electrode 2 and uses a brittle material.
More Like This:
Inventors:
IKEHASHI TAMIO
TOMIZAWA YASUSHI
MASUNISHI KATSURA
SAITO TOMOHIRO
TOMIZAWA YASUSHI
MASUNISHI KATSURA
SAITO TOMOHIRO
Application Number:
JP2009214807A
Publication Date:
March 31, 2011
Filing Date:
September 16, 2009
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01G5/16; B81B3/00; H01H59/00
Domestic Patent References:
| JP2004181552A | 2004-07-02 | |||
| JP2009105031A | 2009-05-14 | |||
| JP2003270555A | 2003-09-25 |
Foreign References:
| WO2005059933A1 | 2005-06-30 |
Attorney, Agent or Firm:
Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Katsumura Hiro
Shoji Kawai
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Katsumura Hiro
Shoji Kawai
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen
Previous Patent: NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
Next Patent: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Next Patent: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME