Title:
金属埋立て方法
Document Type and Number:
Japanese Patent JP4465211
Kind Code:
B2
Abstract:
In a method for filling a hole with a metal, an insulating layer, a first mask layer and a second mask layer are successively formed on a semiconductor substrate. The first and second mask layers are etched using a photoresist pattern to form first and second masks. The first mask layer pattern is selectively etched using an etchant, the first mask layer pattern having a higher etching selectivity than the second layer pattern with respect to the etchant, to form a third mask layer pattern having a broadened opening. The insulating layer is etched using the second mask to form a hole in the insulating layer. A metal layer is formed in the hole and the third opening. The metal layer is planarized to form a metal plug buried in the hole without recesses or voids.
Inventors:
Kawasho Roku
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Kure Shun Kan
Grandchildren
Gold ball
Kure Shun Kan
Grandchildren
Application Number:
JP2004074587A
Publication Date:
May 19, 2010
Filing Date:
March 16, 2004
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
H01L21/28; H01L21/768; H01L21/288
Domestic Patent References:
| JP11251432A | ||||
| JP2002334926A | ||||
| JP8298286A |
Attorney, Agent or Firm:
Mikio Hatta
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii