To provide a metal polishing composition excellent in polishing speed of a conductor film mainly made of copper or copper alloy, having the polishing speed uniform within a plane of the conductor film and capable of production of a semiconductor device with improved flatness, and a chemical mechanical polishing method using the composition.
The metal polishing composition contains (a) a hetero aromatic ring compound having a hydroxyl group as a substituent and having a six-membered ring and a five-membered ring containing hetero atoms in a ring-fused structure, (b) peroxodisulfate and (c) abrasive grains, and is used for chemical mechanical polishing the conductor film mainly made of copper or copper alloy during a semiconductor device manufacturing process, and the chemical mechanical polishing method employs the composition.
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INABA TADASHI
Kato Kazunori
Katsuichi Nishimoto
Hiroshi Fukuda