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Title:
METHOD OF ADJUSTING CRITICAL DIMENSION OF PATTERN
Document Type and Number:
Japanese Patent JP2005196216
Kind Code:
A
Abstract:

To provide a method of adjusting a critical dimension of a measured pattern if the measured pattern has a CD deviation in a photolithography process.

For correcting the CD, the CD deviation in the photolithography process is measured first and a transparent substrate of a photomask is etched by the CD deviation to a dimension smaller than the wavelength λ of an exposure source of the photolithography process to form a recess, an undercut, or an isotropic groove in a photomask. The recess, undercut, a vertical groove, an isotropic groove, a recessed vertical groove, and/or a recessed isotropic groove are formed.


Inventors:
HUH SUNG-MIN
KIM SEONG-HYUCK
SHIN IN-KYUN
Application Number:
JP2005002649A
Publication Date:
July 21, 2005
Filing Date:
January 07, 2005
Export Citation:
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Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
G03C5/00; G03F1/36; G03F1/60; G03F1/68; G03F1/80; G03F7/00; G03F7/20; G03F9/00; H01L21/027; H01L21/30; H01L23/544; (IPC1-7): G03F1/08; G03F1/14; G03F7/20; H01L21/027
Domestic Patent References:
JPH1083063A1998-03-31
JP2003536245A2003-12-02
JPH1069064A1998-03-10
JP2003255511A2003-09-10
JPH07234499A1995-09-05
JPH10333316A1998-12-18
JP2003503756A2003-01-28
Attorney, Agent or Firm:
Mikio Hatta
Yasuo Nara
Etsuko Saito
Katsuyuki Utani